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Highly Efficient 12 kVA Inverter with Natural Convection Cooling Using SiC Switches

Reducing losses is one of the most challenging trends in power electronics. Wide bandgap devices like SiC switches are known to show best performance in terms of lowering conduction and switching losses. It is one decade ago, that Infineon introduced the SiC Schottky barrier diode to the market. Now the SiC JFET is matured and convinces with low power loss, high reliability and robustness, ease of use and right cost position. This paper presents the first industrialized power module making use of the excellent JFET properties. The integration of SiC power devices into a power module is not a completely new task. Some years ago the loss saving potential of SiC Schottky barrier diodes in an Infineon PrimePACK™ 2 module was demonstrated reducing the turn-on energy of IGBTs and the recovery losses of the diodes, respectively. Since the SiC JFET is available as a product very soon, the full SiC loss saving potential will be available by getting rid of IGBTs tail current losses as well. Target applications for the new SiC JFET module will be the efficiency sensitive field of renewable energy and UPS systems.

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585.80 KB
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31/05/2011