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New 4.5 kV IGBT and diode chip set for HVDC Transmission Applications

In this paper, we present the development of a new 4.5 kV trench field stop IGBT and an emitter controlled EC diode for industry applications and especially for HVDC application in an IHM-B package. The IGBT and diode performance is focused on very low on state voltages, fast turn on switching behavior of the IGBT especially for high voltage and high current beyond the standard conditions and simultaneously high robust short circuit performance. Furthermore an extremely high IGBT and diode robustness during over current turn-off is demonstrated. The new devices are designed for an operation temperature up to 150 °C. These features were realized by adaption of the trench cell design as well as the vertical structure of the 6.5 kV IGBT for the 4.5 kV voltage class and improvement of the vertical structure of the IGBT and diode using HDR technology for both devices.

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817.98 KB
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31/05/2014