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符合RoHS标准
无铅

2EDN1132DAA

新品
12 V smart dual-channel high-side MOSFET gate driver with SPI enabling advanced automotive applications
数据手册
封装

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2EDN1132DAA
2EDN1132DAA
数据手册

商品详情

  • 关断传播延迟
    1500 ns
  • 封装
    PG-TSDSO-32
  • 开通传播延迟
    1000 ns
  • 电压等级
    40 V
  • 认证标准
    Automotive
  • 输入Vcc min
    3.1 V
  • 输入Vcc max
    40 V
  • 输出电流 (Source)
    0.075 A
  • 输出电流 (Sink)
    0.275 A
  • 隔离类型
    Non-isolated
OPN
2EDN1132DAAXUMA1
产品状态 coming soon
英飞凌封装名称
PG-TSDSO-32
封装名 N/A
包装尺寸 3000
包装类型 TAPE & REEL
湿度 2a
防潮包装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态 coming soon
英飞凌封装名称
PG-TSDSO-32
封装名 -
包装尺寸 3000
包装类型 TAPE & REEL
湿度 2a
防潮包装 DRY
无铅
无卤素
符合 RoHS 标准
EiceDRIVER™ APD 2EDN1132DAA is an ISO 26262-compliant dual-channel protected high-side MOSFET gate driver for 12 V applications. Its high digital integration allows the monitoring of many signals (such as gate, source, drain voltages) with configurable thresholds for an improved system control. The advanced feature set make it the ideal device for safe, efficient and scalable electrification for modern vehicles.

特性

  • PRO-SIL™ ISO 26262-compliant
  • Wide supply voltage range 3.1 - 40 V
  • Wire protection I²t
  • 2 independent SPI-controlled outputs
  • Drive multiple MOSFETs in parallel
  • Low power idle mode
  • Advanced diagnostics
  • Storage configuration in NVM
  • MOSFET monitoring
  • Comprehensive protection
  • TSDSO-32 package

产品优势

  • Supporting various 12 V applications
  • For flexible configuration
  • High current capability
  • Minimizes current consumption in key-off
  • Safe, fast and efficient operation
  • Supporting ASIL B (D)
  • Fail operational power supply
  • Can act as connection/isolation switch
  • Dependable power supply and distribution

    应用

    文档

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    设计资源

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