新品
现货，推荐
符合RoHS标准
无铅

AIMZA75R016M2H

新品
CoolSiC™ Automotive MOSFET 750 V G2 in TO-247-4 package, 16 mΩ
数据手册
封装

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AIMZA75R016M2H
AIMZA75R016M2H
数据手册

商品详情

  • 最高 ID (@25°C)
    85 A
  • RDS (on) (@ Tj = 25°C)
    16 mΩ
  • 最高 VDS
    750 V
  • 封装
    TO247 4-pin
  • 工作温度 范围
    -55 °C 至 175 °C
  • 技术
    CoolSiC™ G2
  • 极性
    N
  • 认证标准
    Automotive
推荐的
OPN
AIMZA75R016M2HXKSA1
产品状态 active and preferred
英飞凌封装名称
PG-TO247-4
封装名 TO247 4-pin (asymmetric leads)
包装尺寸 240
包装类型 TUBE
湿度 NA
防潮包装 NON DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称
PG-TO247-4
封装名 TO247 4-pin (asymmetric leads)
包装尺寸 240
包装类型 TUBE
湿度 NA
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 750 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.

特性

  • 100% avalanche tested
  • Best‑in‑class RDS(on) x Qfr
  • Excellent RDS(on) x Qoss & RDS(on) x QG
  • Unique low Crss/Ciss & high VGS(th)
  • IFX proprietary die attach technology
  • Driver source pin available

产品优势

  • Enhanced robustness and reliability
  • Superior efficiency in hard switching
  • Higher switching frequency
  • Robustness against parasitic turn on
  • Best‑in‑class thermal dissipation
  • Reduced switching losses

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