CY62138FV30LL-45BVXIT
现货，推荐
符合RoHS标准
无铅

CY62138FV30LL-45BVXIT

数据手册
封装

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CY62138FV30LL-45BVXIT
CY62138FV30LL-45BVXIT
数据手册


商品详情

  • 密度
    2 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 范围
    2.2 V 至 3.6 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    256K x 8
  • 质量等级
    Industrial

推荐的
OPN
CY62138FV30LL-45BVXIT
产品状态 active and preferred
英飞凌封装名称
PG-VFBGA-36
封装名 VFBGA-36 (51-85149)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
TH
晶圆产地
US

产品状态
Active
英飞凌封装名称
PG-VFBGA-36
封装名 VFBGA-36 (51-85149)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
TH
晶圆产地
US
CY62138FV30LL-45BVXIT is a 2-Mbit (256 K × 8) CMOS static RAM with 45 ns access time for fast random read/write storage. It operates from 2.2 V to 3.6 V over –40°C to 85°C and uses CE1/CE2 plus OE/WE control, with automatic power-down when deselected. Supply current is 1.6 mA typ at 1 MHz (2.5 mA max) and standby current is 1 µA typ (5 µA max). It is a Pb-free 36-ball VFBGA device.

特性

  • 2-Mbit SRAM, 256K × 8
  • 45 ns read/write cycle time
  • VCC range 2.2 V to 3.6 V
  • ICC 1.6 mA typ at 1 MHz
  • Standby 1 µA typ, 5 µA max
  • Auto power-down when deselected
  • Data retention at VCC = 1.5 V
  • ICCDR 4 µA max at VCC = 1.5 V
  • 18-bit address bus (A0 to A17)
  • 8-bit bidirectional I/O (I/O0–I/O7)
  • Dual chip enables CE1 and CE2
  • High-Z outputs when deselected

产品优势

  • Fits 8-bit MCU data bus
  • 45 ns supports fast CPU access
  • 2.2–3.6 V matches 3 V rails
  • Low active ICC reduces energy
  • µA standby extends battery life
  • Auto power-down saves idle power
  • 1.5 V retention keeps data in sleep
  • Low ICCDR cuts retention drain
  • 18-bit addr eases memory mapping
  • High-Z outputs prevent bus fights
  • Dual CE and OE simplify expansion
  • Async SRAM interface speeds design

应用

文档

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