CY62147EV18LL-55BVXI
现货，推荐
符合RoHS标准
无铅

CY62147EV18LL-55BVXI

数据手册
封装

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CY62147EV18LL-55BVXI
CY62147EV18LL-55BVXI
数据手册


商品详情

  • 密度
    4 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 范围
    1.65 V 至 2.25 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 目前计划的可用性至少到
    See roadmap
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    256K x 16
  • 质量等级
    Industrial

推荐的
OPN
CY62147EV18LL-55BVXI
产品状态 active and preferred
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2400
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
TH
晶圆产地
US

产品状态
Active
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2400
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
TH
晶圆产地
US
CY62147EV18LL-55BVXI is a 4-Mbit (256 K × 16) CMOS static RAM for low-power portable systems. It operates from 1.65 V to 2.25 V over -40°C to +85°C and provides 55 ns access. At VCC = 2.25 V, ICC is 15 mA typ (20 mA max) at fmax and 2 mA typ at 1 MHz. Automatic power-down cuts standby to 1 µA typ (7 µA max) when deselected. Byte enables (BLE/BHE) support x8 access. It is offered in a Pb-free 48-ball VFBGA.

特性

  • 4-Mbit SRAM organized 256K × 16
  • 55 ns read cycle time (tRC)
  • 45 ns write cycle time (tWC)
  • 1.65 V to 2.25 V single supply
  • 2 mA active current at 1 MHz typ
  • 1 µA standby current (typ)
  • Auto power-down when deselected
  • Data retention at VCC ≥ 1.0 V
  • 0.5 µA data retention current typ
  • High-Z outputs when deselected
  • Byte enables: BLE and BHE
  • ±1 µA input/output leakage max

产品优势

  • Fits 16-bit buses in SRAM
  • 55 ns supports fast CPU access
  • 45 ns writes reduce wait states
  • Runs direct from 1.8 V rails
  • Low active power for portable use
  • µA standby extends battery life
  • Idle bus cuts power automatically
  • Keeps data with backup supply
  • µA retention enables coin cells
  • High-Z avoids bus contention
  • Byte write lowers write bandwidth
  • Low leakage improves power budget

应用

文档

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