CY62148ELL-45ZSXIT
现货，推荐
符合RoHS标准
无铅

CY62148ELL-45ZSXIT

数据手册
封装

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CY62148ELL-45ZSXIT
CY62148ELL-45ZSXIT
数据手册


商品详情

  • 密度
    4 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 最高 工作电压 (VCCQ)
    5.5 V
  • 工作电压 范围
    4.5 V 至 5.5 V
  • 引线球表面
    Pure Sn
  • 接口
    Parallel
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    512K x 8
  • 质量等级
    Industrial
  • 速度
    45 ns

推荐的
OPN
CY62148ELL-45ZSXIT
产品状态 active and preferred
英飞凌封装名称
PG-TSOP-32
封装名 TSOP-II-32 (51-85095)
封装尺寸 1000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
CN
晶圆产地
US

产品状态
Active
英飞凌封装名称
PG-TSOP-32
封装名 TSOP-II-32 (51-85095)
封装尺寸 1000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
CN
晶圆产地
US
The CY62148ELL-45ZSXIT is a 4-Mbit (512K × 8) CMOS static RAM optimized for low power operation on 4.5 V to 5.5 V supplies. The -45 speed grade supports 45 ns access for fast reads and writes. It offers automatic CE power-down with 2.5 µA typical standby (7 µA max, industrial) and 3.5 mA typical active current at 1 MHz. The ZS option is a 32-pin Pb-free TSOP II for processor memory and buffering.

特性

  • 4-Mbit (512K × 8) CMOS SRAM
  • 45 ns read cycle time (tRC)
  • 4.5 V to 5.5 V supply (VCC)
  • Automatic power-down (CE HIGH)
  • Standby current 2.5 µA typ
  • Standby current 7 µA max
  • Active current 3.5 mA typ @1 MHz
  • Data retention at VCC ≥2.0 V (VDR)
  • Data retention current 8.8 µA max
  • OE/CE/WE control read/write
  • 10 pF max CIN, 10 pF max COUT

产品优势

  • Fast SRAM reads for quick response
  • Works with 5 V logic supplies
  • Auto power-down cuts idle power
  • µA standby extends battery life
  • Low active current reduces heat
  • Retains data with 2 V backup rail
  • Low ICCDR suits always-on memory
  • Simple CE/OE enables expansion
  • High-Z outputs ease bus sharing
  • Low pin capacitance supports speed
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