CY62157EV18LL-55BVXIT
现货，推荐
符合RoHS标准
无铅

CY62157EV18LL-55BVXIT

数据手册
封装

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CY62157EV18LL-55BVXIT
CY62157EV18LL-55BVXIT
数据手册


商品详情

  • 密度
    8 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 范围
    1.65 V 至 2.25 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 目前计划的可用性至少到
    2033
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    512K x 16
  • 质量等级
    Industrial

推荐的
OPN
CY62157EV18LL-55BVXIT
产品状态 active and preferred
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TH
晶圆产地
TW,US

产品状态
Active
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 2000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
TH
晶圆产地
TW,US
CY62157EV18LL-55BVXIT is an 8-Mbit (512K × 16) CMOS asynchronous SRAM for 1.65 V to 2.25 V operation (1.8 V typ) with a 55 ns speed grade. It supports byte writes via BHE/BLE and uses CE1/CE2 and OE/WE controls for read/write and standby. Automatic power-down reduces standby current to 2 µA typical (8 µA max); active current is 6 mA typical at 1 MHz and up to 25 mA max at fmax, in a 48-ball Pb-free VFBGA.

特性

  • 8-Mbit SRAM organized 512K x 16
  • 55 ns read/write cycle (tRC/tWC)
  • Single-supply VCC 1.65 V to 2.25 V
  • 6 mA active current at 1 MHz
  • 2 uA standby (ISB), 8 uA max
  • Data retention to VCC = 1.0 V
  • Data retention current 9 uA max
  • OE-controlled tri-state outputs
  • Dual chip enable inputs CE1/CE2
  • Byte write via BHE and BLE pins

产品优势

  • Fits 16-bit systems with no glue
  • 55 ns cycles support fast access
  • Runs from 1.8 V-class rails
  • Lower active power in SRAM reads
  • Extends battery life in standby
  • Keeps data with backup supply
  • Low retention current saves energy
  • Simplifies bus sharing on outputs
  • Easy expansion with CE1/CE2
  • Updates 8-bit bytes, less writes

应用

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