FC560R12D3H7F_B78
新品
现货，推荐
符合RoHS标准

FC560R12D3H7F_B78

新品
1200 V, 560 A in 3-level boost topology IGBT module
数据手册

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

FC560R12D3H7F_B78
FC560R12D3H7F_B78
数据手册


商品详情

  • IC(nom) / IF(nom)
    280 A
  • 最高 IC
    280 A
  • VCE(sat) (Tvj=25°C typ)
    1.22 V
  • VCES / VRRM
    1200 V
  • VF (Tvj=25°C typ)
    2.5 V
  • 封装
    EasyPACK™ HD3
  • 尺寸 (length)
    112.2 mm
  • 尺寸 (width)
    65.2 mm
  • 技术
    IGBT7 - H7
  • 特性
    High current pin
  • 最高 电压等级
    1200 V
  • 认证标准
    Industrial
  • 配置
    Booster

推荐的
OPN
FC560R12D3H7FB78BPSA1
产品状态 active and preferred
英飞凌封装名称 AG-EASYHD
封装名 N/A
封装尺寸 8
封装类型 TRAY
湿度 NA
防潮封装 NON DRY
无铅 No
无卤素 No
符合RoHS标准 Yes

产品状态
Active
英飞凌封装名称 AG-EASYHD
封装名 -
封装尺寸 8
封装类型 TRAY
湿度 NA
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
EasyPACK™ HD3 1200 V, 560 A in 3-level boost IGBT module with 1200 V TRENCHSTOP™ IGBT7 H7, SiC diode, 1600 V emitter controlled 8 rectifier diode with 2 MPPT per module and Integrated NTC.

特性

  • Easy family with baseplate for high power density and high voltage application
  • High performance substrate
  • Flexible pin grid with high current solder pin
  • CTI 600 materials with high RTI
  • High performance gel
  • Latest chip technologies H7
  • Emitter controlled 8 rectifier diode, SiC Diode

产品优势

  • Tvj 175 degree continuous
  • Enable long-term thermal and mechanical stability
  • Enable high power rating, high power density
  • Support DC system up to 2000 V
  • Low stray inductance design with high system efficiency
  • easy to design

应用

光伏
文档

设计资源

合作伙伴解决方案

开发者社区