新品
现货,推荐
符合RoHS标准

IAUCN04S7L018D

新品
40 V, N-Ch, 1.94 mΩ max, Automotive MOSFET, Dual SSO8 (5x6), OptiMOS™7

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IAUCN04S7L018D
IAUCN04S7L018D

商品详情

  • Country of Assembly (Last BE site, current, subject to change)
    Malaysia
  • Country of Diffusion (Last FE site, current, subject to change)
    Austria, Germany
  • 最高 ID (@25°C)
    60 A
  • 最高 QG (typ @10V)
    56 nC
  • QG (typ @10V)
    43 nC
  • 最高 RDS (on) (@10V)
    1.94 mΩ
  • 最高 VDS
    40 V
  • VGS(th) 范围
    1.2 V 至 1.8 V
  • VGS(th)
    1.5 V
  • 封装
    PG-TDSON-8
  • 工作温度 范围
    -55 °C 至 175 °C
  • 技术
    OptiMOS™7
  • 推出年份
    2026
  • 极性
    N+N
  • 目前计划的可用性至少到
    2038
  • 系列
    Automotive MOSFET
  • 认证标准
    Automotive
OPN
IAUCN04S7L018DATMA1
产品状态 active and preferred
英飞凌封装名称
封装名 Dual SSO8
包装尺寸 5000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称
封装名 Dual SSO8
包装尺寸 5000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
The new automotive OptiMOS™7 40 V dual SSO8 MOSFET is offered in our reliable SSO8 5x6 mm² SMD package. It features two independent N-channel MOSFETs integrated in one package for PCB area savings. It is designed specifically for high performance, high quality and the robustness needed for demanding and cost-efficient power automotive applications. The new portfolio provides a wide RDS range from 1.94 mΩ to 5.59 mΩ combined with an increased current rating of 60 A.

特性

  • 5x6 mm² small footprint
  • 60 A high current capability
  • Leading-edge OptiMOS™7 40 V
  • RDS(on) from 1.94 mΩ to 5.59 mΩ
  • Leadless package with Cu-clip
  • High avalanche capability

产品优势

  • Highest power & current density
  • High thermal capacity leadframe package
  • Reduced conduction losses
  • Optimized switching behavior
  • Reduced form factor
  • Industry standard package
  • JEDEC standard PG-TDSON-8

应用

文档

设计资源

开发者社区

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