IAUCN04S7N007T
新品
现货，推荐
符合RoHS标准

IAUCN04S7N007T

新品
40 V, N-Ch, 0.76mΩ max, Automotive MOSFET, SSO10T (5x7), OptiMOS™7
数据手册
封装

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IAUCN04S7N007T
IAUCN04S7N007T
数据手册


商品详情

  • 最高 ID (@25°C)
    175 A
  • 最高 QG (typ @10V)
    126 nC
  • QG (typ @10V)
    97 nC
  • 最高 RDS (on) (@10V)
    0.76 mΩ
  • 最高 VDS
    40 V
  • VGS(th) 范围
    2.2 V 至 3 V
  • VGS(th)
    2.6 V
  • 封装
    PG-LHDSO-10
  • 工作温度 范围
    -55 °C 至 175 °C
  • 技术
    OptiMOS™7
  • 极性
    N
  • 目前计划的可用性至少到
    2038
  • 质量等级
    Automotive

推荐的
OPN
IAUCN04S7N007TATMA1
产品状态 active and preferred
英飞凌封装名称
PG-LHDSO-10
封装名 N/A
封装尺寸 2000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
封装产地
MY
晶圆产地
AT,DE

产品状态
Active
英飞凌封装名称
PG-LHDSO-10
封装名 -
封装尺寸 2000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
封装产地
MY
晶圆产地
AT,DE
The SSO10T 5x7 (LHDSO-10) package offers 175A current capability. With Infineon's OptiMOS™7 40V MOSFET technology, it delivers high power density, efficient top-side cooling, and the industry's lowest on-state resistance on a 5x7mm2. It features reduced switching losses, improved SOA ruggedness, and high avalanche capability for efficient automotive design.

特性

  • Direct cooling to ECU housing
  • Improves Zth by up to -50%
  • Improves Rth by up to -50%
  • Offers double sided PCB design
  • Increases application currents
  • JEDEC listed package

产品优势

  • Best cooling performance
  • No heat transfer into PCB but direct to housing
  • Very compact PCB design
  • Reduces system area
  • Reduces cooling efforts & costs (no more vias)
  • Less system design costs
  • High power density & efficiency

应用

文档

设计资源

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