现货，推荐
符合RoHS标准

IAUCN04S7N024H

40 V, N-Ch, 2.46 mΩ, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS™-7
数据手册
封装

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IAUCN04S7N024H
IAUCN04S7N024H
数据手册

商品详情

  • Country of Assembly (Last BE site, current, subject to change)
    Malaysia
  • Country of Diffusion (Last FE site, current, subject to change)
    Austria, Germany
  • 最高 ID (@25°C)
    100 A
  • 最高 QG (typ @10V)
    32 nC
  • QG (typ @10V)
    25 nC
  • 最高 RDS (on) (@10V)
    2.46 mΩ
  • 最高 VDS
    40 V
  • VGS(th) 范围
    2.2 V 至 3 V
  • VGS(th)
    2.6 V
  • 工作温度 范围
    -55 °C 至 175 °C
  • 技术
    OptiMOS™7
  • 推出年份
    2025
  • 极性
    N
  • 目前计划的可用性至少到
    2038
  • 认证标准
    Automotive
推荐的
OPN
IAUCN04S7N024HATMA1
产品状态 active and preferred
英飞凌封装名称
PG-TDSON-8
封装名 Dual SSO8 HB
包装尺寸 5000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称
PG-TDSON-8
封装名 Dual SSO8 HB
包装尺寸 5000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
The new integrated SSO8 half-bridge (5x6mm²) is the innovative and cost-efficient package solution for motor drive & body applications. The integrated half-bridge provides the ideal solution for optimized routing in bridge applications and helps reduce the PCB area considerably. The new OptiMOS™-7 40V portfolio provides a wide RDS(on) range from 2.3 mΩ to 5.4 mΩ combined with an increased current rating of up to 100A.

特性

  • 5x6 mm² H-bridge footprint
  • Up to 100A high current capability
  • 2-channel H-bridge configuration
  • Leading-edge OptiMOS™-7 40V
  • RDS(on) range: 2.3 mΩ – 5.4 mΩ
  • Cu-clip for low RDS(on) & low inductance
  • High avalanche capability
  • SOA ruggedness

产品优势

  • High power & current density in H-bridge
  • Optimized layout & form factor
  • High thermal capacity lead-frame
  • Reduced conduction losses
  • Optimized switching behavior
  • JEDEC industry std. package
  • Automotive robust package & IFX quality

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