IAUCN08S5N068T
新品
现货，推荐
符合RoHS标准

IAUCN08S5N068T

新品
80 V, N-Ch, 6.9 mΩ max, Automotive MOSFET, top-side cooled SSO10T (5x7), OptiMOS™ 5
数据手册
封装

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IAUCN08S5N068T
IAUCN08S5N068T
数据手册


商品详情

  • 最高 ID (@25°C)
    80 A
  • 最高 QG (typ @10V)
    25.4 nC
  • QG (typ @10V)
    33 nC
  • 最高 RDS (on) (@10V)
    6.9 mΩ
  • VDS
    80 V
  • VGS(th) 范围
    2.2 V 至 3.8 V
  • VGS(th)
    3 V
  • 封装
    PG-LHDSO-10
  • 工作温度 范围
    -55 °C 至 175 °C
  • 技术
    OptiMOS™5
  • 极性
    N
  • 目前计划的可用性至少到
    2040
  • 质量等级
    Automotive

推荐的
OPN
IAUCN08S5N068TATMA1
产品状态 active and preferred
英飞凌封装名称
PG-LHDSO-10
封装名 N/A
封装尺寸 2000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
封装产地
MY
晶圆产地
DE

产品状态
Active
英飞凌封装名称
PG-LHDSO-10
封装名 -
封装尺寸 2000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
封装产地
MY
晶圆产地
DE
IAUCN08S5N068T is an automotive MOSFET built with Infineon’sinnovative, top-side cooled SSO10T 5x7mm2 SMD package. The SSO10T package helps customers achieve big advancements in cooling and power density. This product also utilizes Infineon’s OptiMOS™ 5 80 V power semiconductor technology. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applications.

特性

  • Direct cooling path to ECU housing
  • Virtually no heat flows into PCB
  • Industry’s largest exposed pad area
  • Freedom to route traces under package
  • Can mount parts on back side of PCB
  • Fast switching times (turn on/off)
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Package is listed with JEDEC

产品优势

  • Enables excellent thermal management
  • Thermal impedance improved 20% to 50%
  • Thermal resistance improved 20% to 50%
  • Helps reduce ECU volume or PCB area
  • Helps reduce PCB cost (area, Cu, vias)
  • Reduces PCB and system design effort
  • Superior switching performance
  • Quality and robustness for automotive
  • Potential for second source supplier
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