IAUCP04P4L040
新品
现货，推荐
符合RoHS标准

IAUCP04P4L040

新品
-40 V, P-Ch, 3.7 mΩ max, Automotive MOSFET, Single SSO8 (5x6), OptiMOS™P2
数据手册
封装

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IAUCP04P4L040
IAUCP04P4L040
数据手册


商品详情

  • 最高 ID (@25°C)
    -163 A
  • 最高 QG (typ @10V)
    146 nC
  • QG (typ @10V)
    112 nC
  • 最高 RDS (on) (@10V)
    3.7 mΩ
  • 最高 VDS
    -40 V
  • VGS(th) (typ) 范围
    -1.2 V 至 -2.2 V
  • VGS(th) (typ)
    -1.7 V
  • 最低 工作温度
    -55 °C
  • 技术
    OptiMOS™P2
  • 极性
    P
  • 目前计划的可用性至少到
    2038
  • 质量等级
    Automotive

推荐的
OPN
IAUCP04P4L040ATMA1
产品状态 active and preferred
英飞凌封装名称
PG-TDSON
封装名 N/A
封装尺寸 5000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
封装产地
MY
晶圆产地
AT

产品状态
Active
英飞凌封装名称
PG-TDSON
封装名 -
封装尺寸 5000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
封装产地
MY
晶圆产地
AT
The new automotive -40 V OptiMOS™ P2 Single SSO8 MOSFET is available in our SSO8 (5x6 mm²) SMD package. This leadless, clip-soldered P-channel MOSFET is designed for the high performance, quality, and robustness required by demanding and space limited automotive applications. The new P-channel portfolio offers a wide RDS(on) range from 2.0 to 12.5 mΩ, making it well suited for various applications, particularly reverse polarity protection.

特性

  • P-channel MOSFET for automotive use
  • Leadless 5x6 mm2 package with Cu-clip
  • Qualification beyond AEC‑Q101
  • Enhanced electrical testing
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • 100% Avalanche tested
  • RoHS compliant
  • Robust design

产品优势

  • Wide RDS(on) range: 2.0 - 12.5 mΩ
  • High current capability up to 175 A
  • Lowest switching and conduction losses
  • Reduced form factor
  • JEDEC standard PG-TDSON-8 package
  • PPAP capable device
文档

设计资源

合作伙伴解决方案

开发者社区