IAUTN08S7N013
新品
现货，推荐
符合RoHS标准

IAUTN08S7N013

新品
80 V, N-Ch, 1.31 mΩ max, Automotive MOSFET, TOLL (10x12), OptiMOS™ 7
封装

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IAUTN08S7N013
IAUTN08S7N013


商品详情

  • 最高 ID (@25°C)
    294 A
  • 最高 QG (typ @10V)
    143 nC
  • QG (typ @10V)
    110 nC
  • 最高 RDS (on) (@10V)
    1.31 mΩ
  • 最高 VDS
    80 V
  • VGS(th) 范围
    2.3 V 至 3.2 V
  • VGS(th)
    2.8 V
  • 封装
    PG-HSOF-8
  • 工作温度 范围
    -55 °C 至 175 °C
  • 技术
    OptiMOS™ 7
  • 极性
    N
  • 目前计划的可用性至少到
    2040
  • 质量等级
    Automotive

推荐的
OPN
IAUTN08S7N013ATMA1
产品状态 active and preferred
英飞凌封装名称
PG-HSOF-8
封装名 TOLL
封装尺寸 2000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
封装产地
MY
晶圆产地
AT

产品状态
Active
英飞凌封装名称
PG-HSOF-8
封装名 TOLL
封装尺寸 2000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
封装产地
MY
晶圆产地
AT
IAUTN08S7N013 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80 V.This product is offered in the TOLL 10x12mm2 power package, which Infineon first introduced to the market. It is designed, qualified and manufactured specifically for the high performance, quality, and robustness needed for demanding automotive applications.

特性

  • Low on-resistance, RDS(on)
  • Leading edge FOM (RDS(on) x Qg)
  • Fast switching times (turn on/off)
  • High power, high current TOLL package
  • Low package resistance and inductance
  • Excellent thermal performance
  • High SOA ruggedness
  • Tight threshold voltage, VGS(th), range
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Package is listed with JEDEC

产品优势

  • Low conduction losses
  • Superior switching performance
  • Higher power density
  • Higher efficiency
  • Increased design ruggedness
  • Well-suited for parallel placement
  • Could reduce MOSFET part count on BOM
  • Quality and robustness for automotive
  • Potential for second source supplier
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