新品
现货，推荐
符合RoHS标准

IAUZN04S7L019

新品
40 V, N-Ch, 1.90 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7
数据手册
封装

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IAUZN04S7L019
IAUZN04S7L019
数据手册

商品详情

  • ID (@25°C) max
    60 A
  • QG (typ @10V)
    34 nC
  • RDS (on) (@10V) max
    1.9 mΩ
  • VDS max
    40 V
  • VGS(th)
    1.5 V
  • Package
    S3O8
  • Operating Temperature
    -55 °C to 175 °C
  • Technology
    OptiMOS™-7
  • Launch year
    2025
  • Polarity
    N
  • Currently planned availability until at least
    2038
  • Qualification
    Automotive
受到推崇的
OPN
IAUZN04S7L019ATMA1
产品状态 active and preferred
英飞凌封装名称
PG-TSDSON-8
封装名 S3O8
包装尺寸 5000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称
PG-TSDSON-8
封装名 S3O8
包装尺寸 5000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for Automotive applications, e.g. power distribution, body control modules and electric motors.

特性

  • 3x3 mm² small footprint
  • 60A high current capability
  • Advanced leadless package
  • Leading-edge OptiMOS™-7 40V technology
  • RDS(on) range: 1.2 mΩ – 4.9 mΩ
  • Cu-clip for low RDS(on) & low inductance
  • High avalanche capability
  • High SOA ruggedness
  • PPAP capable device

产品优势

  • Highest power and current density
  • High thermal capacity lead-frame package
  • Reduced conduction losses
  • Optimized switching behavior
  • Reduced form factor vs. leaded packages
  • JEDEC Industry std. package PG-TSDSON-8

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文档

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