新品
现货，推荐
符合RoHS标准
无铅

IMBG75R040M2H

新品
The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability.
数据手册
封装

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IMBG75R040M2H
IMBG75R040M2H
数据手册

商品详情

  • ID (@25°C) max
    42 A
  • RDS (on) (@ Tj = 25°C)
    40 mΩ
  • RthJC max
    0.96 K/W
  • VDS max
    750 V
  • 安装
    SMT
  • 封装
    D2PAK 7-pin
  • 工作温度
    -55 °C to 175 °C
  • 技术
    CoolSiC™ G2
  • 极性
    N
  • 认证标准
    Industrial
推荐的
OPN
IMBG75R040M2HXTMA1
产品状态 active and preferred
英飞凌封装名称
PG-TO263-7
封装名 D2PAK 7-pin
包装尺寸 1000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称
PG-TO263-7
封装名 D2PAK 7-pin
包装尺寸 1000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon.  It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.

特性

  • Highly robust 750 V technology
  • Best-in-class RDS(on) x Qfr
  • Excellent Ron x Qoss and Ron x QG
  • Low Crss/Ciss together and high Vgsth
  • 100% avalanche tested 
  • Infineon die attach technology 
  • Cutting-edge top-side-cooled package

产品优势

  • Superior efficiency in hard switching
  • Enables higher switching frequency
  • Higher reliability
  • Withstand bus voltages beyond 500 V
  • Robustness against parasitic turn
  • Unipolar driving
  • Best-in-class thermal dissipation

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文档

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