新品
现货，推荐
符合RoHS标准
无铅

IMDQ75R050M2H

新品
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 50 mΩ
数据手册
封装

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IMDQ75R050M2H
IMDQ75R050M2H
数据手册

商品详情

  • ID (@25°C) max
    36 A
  • RDS (on) (@ Tj = 25°C)
    50 mΩ
  • RthJC max
    1.01 K/W
  • VDS max
    750 V
  • 安装
    SMT
  • 封装
    Q-DPAK
  • 工作温度
    -55 °C to 175 °C
  • 技术
    CoolSiC™ G2
  • 极性
    N
  • 认证标准
    Industrial
推荐的
OPN
IMDQ75R050M2HXTMA1
产品状态 active and preferred
英飞凌封装名称
PG-HDSOP-22
封装名 Q-DPAK
包装尺寸 750
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称
PG-HDSOP-22
封装名 Q-DPAK
包装尺寸 750
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
The CoolSiC™ Automotive MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for automotive applications.

特性

  • 100% avalanche tested
  • Best‑in‑class RDS(on) x Qfr
  • Excellent RDS(on) x Qoss & RDS(on) x QG
  • Unique low Crss/Ciss & high VGS(th)
  • Improved package interconnect with .XT
  • Driver source pin available

产品优势

  • Enhanced robustness and reliability
  • Superior efficiency in hard switching
  • Higher switching frequency
  • Robustness against parasitic turn on
  • Best‑in‑class thermal dissipation
  • Reduced switching losses

文档

文档

设计资源

合作伙伴解决方案

开发者社区

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "向社区提问", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "查看所有讨论", "labelEn" : "View all discussions" } ] }