新品
现货,推荐
符合RoHS标准
无铅

IPDQ60R055CM8

新品
600 V CoolMOS™ 8 power transistor

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IPDQ60R055CM8
IPDQ60R055CM8

商品详情

  • ID (@ TC=25°C) max
    45 A
  • ID (@25°C) max
    45 A
  • IDpuls (@25°C) max
    148 A
  • Ptot (@25°C) max
    236 W
  • QG (typ @10V)
    51 nC
  • RDS (on) (@ Tj = 25°C)
    45.83315 mΩ
  • VDS max
    600 V
  • VGS(th)
    4.2 V
  • 安装
    SMT
  • 封装
    Q-DPAK
  • 工作温度 (Tj)
    -55 °C to 150 °C
  • 极性
    N
OPN
IPDQ60R055CM8XTMA1
产品状态 active and preferred
英飞凌封装名称
封装名 Q-DPAK
包装尺寸 750
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称
封装名 Q-DPAK
包装尺寸 750
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.

特性

  • Significant reduction of losses
  • Excellent commutation ruggedness
  • Integrated fast body diode
  • .XT interconnection
  • ESD protection
  • Top-side cooling QDPAK package
  • 12000 cycle TCoB

产品优势

  • Increased power density
  • Ease of use and fast design-in
  • Low ringing tendency
  • Simplified thermal management
  • Simplified portfolio
  • SMT compatible
  • Reduced assembly cost
  • Reduced stray inductance
  • Space reduction

应用

文档

设计资源

开发者社区

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "向社区提问", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "查看所有讨论", "labelEn" : "View all discussions" } ] }