现货，推荐
符合RoHS标准

ISG0614N06NM5HSC

OptiMOS™ 5 dual N-channel 60 V MOSFETs in scalable power block with dual-side cooling capability
数据手册
封装
每件.
有存货

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ISG0614N06NM5HSC
ISG0614N06NM5HSC
每件.
数据手册

商品详情

  • 最高 ID (@25°C)
    233 A
  • QG (typ @10V)
    68 nC
  • 最高 RDS (on) (@10V)
    1.6 mΩ
  • 最高 VDS
    60 V
  • VGS(th) 范围
    2.1 V 至 3.3 V
  • VGS(th)
    2.8 V
  • 封装
    Power Block 6.3x6
  • 工作温度 范围
    -55 °C 至 175 °C
  • 极性
    N
  • 特殊功能
    Symmetrical Half-bridge, Dual-Side Cooling
推荐的
OPN
ISG0614N06NM5HSCATMA1
产品状态 active and preferred
英飞凌封装名称
PG-WHITFN-10
封装名 PQFN 6.3x6
包装尺寸 3000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:
 每件. 有存货

产品状态
Active
英飞凌封装名称
PG-WHITFN-10
封装名 PQFN 6.3x6
包装尺寸 3000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
每件.
有存货
Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 1.6 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual-side cooling capability boosts power throughput by an additional 25% with superior thermal management.

特性

  • Cutting edge OptiMOS™ silicon technology
  • Outstanding FOMs
  • High chip/package ratio
  • Optimized lead-frame and Cu-clip design
  • Internally connected Q1/Q2 MOSFETs
  • Compact and simplified layout design
  • Dual-side cooling

产品优势

  • Minimized conduction losses
  • Reduced voltage overshoot
  • High power capability
  • Superior thermal performance
  • Lowest loop inductance
  • Superior switching performance/EMI
  • Superior thermal management

文档

文档

设计资源

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