RIC70115G
新品
现货，推荐

RIC70115G

新品
Non-isolated high or low side GaN HEMT driver
数据手册

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RIC70115G
RIC70115G
数据手册


商品详情

  • SEE
    81.9
  • 最高 TID
    100 Krad(Si)
  • 产品类别
    Gate Driver
  • 偏置电源电压 范围
    4.75 V 至 13.2 V
  • 封装
    LCC-16
  • 工作温度 范围
    -55 °C 至 125 °C
  • 拓扑结构
    High-side and low-side
  • 质量等级
    COTS (EM)
  • 通道
    1

推荐的
OPN
产品状态 active and preferred
英飞凌封装名称 C-LCC-16
封装名 LCC-16
封装尺寸 N/A
封装类型 N/A
湿度 N/A
防潮封装 N/A
无铅 No
无卤素 Yes
符合RoHS标准 No

产品状态
Active
英飞凌封装名称 C-LCC-16
封装名 LCC-16
封装尺寸 0
封装类型
湿度 -
防潮封装
无铅
无卤素
符合 RoHS 标准
RIC70115 is a single channel gate driver that can work in low or high side applications. It has a logic level output, which makes it well suited to drive GaN Schottky gate (SG) HEMT or logic level Si FETs like the rad hard R8 FET family. RIC70115 will be certified for use in space applications per Defense Logistics Agency (DLA) MIL-PRF-38535 Class V.

特性

  • Truly differential input (TDI) circuitry
  • Wide supply range of 4.75 V to 15 V
  • Regulated 4.8 V drive voltage
  • Source/sink 1.5 A / 2.5 A drive current
  • Low 2.9 ns matching propagation delay
  • MIL-PRF-38535 QMLV qualified
  • Short propagation delay
  • Integrated miller clamp
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