RIC70115G
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RIC70115G

Non-isolated high or low side GaN HEMT driver
数据手册

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RIC70115G
RIC70115G
数据手册


商品详情

  • 最高 TID
    100 Krad(Si)
  • VS
    17.1 V
  • 供电电压 范围
    0.3 V 至 17.1 V
  • 偏置电源电压 范围
    4.75 V 至 15 V
  • 封装
    LCC-16
  • 最高 输出电压
    6.5 V
  • 通道数
    1
  • 配置
    High-side and low-side

OPN
产品状态 coming soon
英飞凌封装名称 C-LCC-16
封装名 LCC-16
封装尺寸 N/A
封装类型 N/A
湿度 N/A
防潮封装 N/A
无铅 No
无卤素 Yes
符合RoHS标准 No

产品状态 coming soon
英飞凌封装名称 C-LCC-16
封装名 LCC-16
封装尺寸 0
封装类型
湿度 -
防潮封装
无铅
无卤素
符合 RoHS 标准
RIC70115 is a single channel gate driver that can work in low or high side applications.  It has a logic level output, which makes it well suited to drive GaN Schottky gate (SG) HEMT or logic level Si FETs like the rad hard R8 FET family. RIC70115 will be certified for use in space applications per Defense Logistics Agency (DLA) MIL-PRF-38535 Class V.

特性

  • Truly differential input (TDI) circuitry
  • Wide supply range of 4.75 V to 15 V
  • Regulated 4.8 V drive voltage
  • Source/sink 1.5 A / 2.5 A drive current
  • Low 2.9 ns matching propagation delay
  • MIL-PRF-38535 QMLV qualified
  • Short propagation delay
  • Integrated miller clamp
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