SIGC08T60SE

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SIGC08T60SE
SIGC08T60SE

商品详情

  • IC max
    15 A
  • VCE(sat) max
    2.05 V
  • VCE max
    600 V
  • VDS max
    600 V
  • VGE(th)
    4.1 V to 5.7 V
  • Operating Temperature
    -40 °C to 150 °C
  • Technology
    IGBT3 Fast
OPN
产品状态
英飞凌封装名称
封装名
包装尺寸
包装类型
湿度
防潮包装
无铅
无卤素
符合RoHS标准
Infineon stock last updated:
我们的 TRENCHSTOP™ IGBT 结合了独特的沟槽和场截止技术,是行业的标杆

特性

  • 低关断损耗
  • 短尾电流
  • 正温度系数
  • 易于并联

应用

文档

设计资源

开发者社区

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