2EDL6014AC-G2D
新品
现货，推荐
符合RoHS标准
无铅

2EDL6014AC-G2D

新品
EiceDRIVER™ 120 V Level shifter gate driver IC that is designed to drive dual high-side, dual low-side or half-bridge configurations of Si MOSFETs
数据手册
封装

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2EDL6014AC-G2D
2EDL6014AC-G2D
数据手册

商品详情

  • 最高 Iout
    6 A
  • 封装
    WQFN11-2.2x2.2
  • 拓扑结构
    Dual-floating channels
  • 认证标准
    Industrial
  • 输入Vcc 范围
    2.97 V 至 5.5 V
  • 输入信号电压 范围
    2.97 V 至 5.5 V
  • 输出电压 范围
    0 V 至 16 V
  • 输出的数量
    2
  • 通道数
    2
推荐的
OPN
2EDL6014ACG2DXTMA1
产品状态 active and preferred
英飞凌封装名称
PG-WQFN-11-1
封装名 N/A
封装尺寸 5000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes

产品状态
Active
英飞凌封装名称
PG-WQFN-11-1
封装名 N/A
封装尺寸 5000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
The EiceDRIVER™ 2EDL6014AC is a dual-channel level shifter gate driver IC with dual floating outputs to drive silicon MOSFETS. This strong 4 A/6 A source/sink current dual-channel gate driver has a programmable driving current on OUTA to limit inrush current during system start-up. It is available in QFN-11 (2.2 x 2.2 mm) with an exposed thermal pad for good thermal management.

特性

  • Dual-channel floating output gate driver
  • Strong 4 A source and 6 A sink current
  • Configurable driving current on OUTA
  • Package: QFN-11 2.2x2.2 mm w/ exposed pad
  • Low RthJC_B
  • 4 V to 16 V driving capability

产品优势

  • Support wide range of power topologies
  • Compact and thermally capable solution
  • Suitable for high power applications
  • Flexible for many customer requirements
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