即将推出
符合RoHS标准
无铅

2EDL900G3

EiceDRIVER™ 120 V Level shifter gate driver IC that is designed to drive dual high-side, dual low-side or half-bridge configurations of Si MOSFETs
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2EDL900G3
2EDL900G3
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商品详情

  • 认证标准
    Industrial
  • 输入Vcc 范围
    3.8 V 至 15 V
  • 输出电压 范围
    0 V 至 16 V
  • 最高 输出电流
    4 A
  • 通道数
    2
OPN
2EDL900G3XTMA1
产品状态 coming soon
英飞凌封装名称 PG-TSNP-16
封装名 N/A
包装尺寸 5000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态 coming soon
英飞凌封装名称 PG-TSNP-16
封装名 -
包装尺寸 5000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
The EiceDRIVER™ 2EDL900G3 is a dual channel level shifter gate driver IC with dual floating outputs to drive silicon MOSFETS. This strong 4 A/6 A source/sink current dual-channel gate driver has an integrated current sense amplifier. It also has a programmable deadtime and mode of operations such as tri-state single PWM mode, HSCC HS mode, HSCC LS mode, Hi/Li inverted mode, and Hi/Li mode. It is available in 16 pins 3x3 mm package.

特性

  • Dual-channel floating output driver
  • Strong 4 A source and 6 A sink current
  • 4 V to 16 V driving capability
  • Configurable deadtime or turn-on delay
  • Integrated current sense amplifier
  • Configurable mode of operations

产品优势

  • Support wide range of power topologies
  • Compact and thermally capable solution
  • Suitable for high power applications
  • Flexible for many customer requirements

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