AMM12S18LB1Z
新品
现货，推荐
符合RoHS标准
无铅

AMM12S18LB1Z

新品
CIPOS™ Prime CoolSiC™ MOSFET sixpack module 1200 V
数据手册
封装

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AMM12S18LB1Z
AMM12S18LB1Z
数据手册
  • RDS (on) (@ Tj = 25°C)
    18 mΩ
  • 封装
    DIP 44x28D
  • 尺寸 (width)
    27.4 mm
  • 尺寸 (length)
    44 mm
  • 应用
    Drives, HVAC, OBC, DC-DC Converter, ESS, EV Charger, UPS, Traction
  • 特性
    CIPOS Dual Inline
  • 认证标准
    Automotive
  • 配置
    3-phase Bridge
推荐的
OPN
AMM12S18LB1ZXKMA1
产品状态 active and preferred
英飞凌封装名称
N/A
封装名 DIP 44x28D
封装尺寸 176
封装类型 TUBE
湿度 NA
防潮封装 NON DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes

产品状态
Active
英飞凌封装名称
N/A
封装名 DIP 44x28D
封装尺寸 176
封装类型 TUBE
湿度 NA
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
CIPOS™ Prime CoolSiC™ MOSFET sixpack module 1200 V, 18 mΩ G2 automotive power module in DIP44x28D package delivers best-in-class performance for xEV applications. Featuring automotive-grade CoolSiC™ MOSFETs in a fully isolated, compact molded package, it supports 6.6 kW up to 44 kW OBC and DC/DC topologies, AEC-Q101 and AQG324 qualified, it offers unmatched reliability, a Poka-Yoke zig-zag pin-out, and secured supply for next-generation electric vehicle systems.

特性

  • CoolSiC™ Gen2 1200 V MOSFET
  • Lower switching losses
  • Superior gate oxide reliability
  • Threshold voltage of Vth > 4 V
  • Fullbridge & 3-phase bridge
  • Rds from 18 mΩ to 62 mΩ
  • AQG-324 and AEC-Q101 qualified

产品优势

  • 第二代 1200V CoolSiC™ 碳化硅 MOS 管
  • 采购流程简化
  • 防呆设计，提升装配可靠性
  • 整机鲁棒性
  • 具备卓越的CoolSiC™ MOSFET 性能
  • 业界领先的车规级品质与可靠性
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