CY62137FV18LL-55BVXI
现货，推荐
符合RoHS标准
无铅

CY62137FV18LL-55BVXI

数据手册
封装

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CY62137FV18LL-55BVXI
CY62137FV18LL-55BVXI
数据手册


商品详情

  • 密度
    2 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 范围
    1.65 V 至 2.25 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 目前计划的可用性至少到
    See roadmap
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    128K x 16
  • 质量等级
    Industrial

推荐的
OPN
CY62137FV18LL-55BVXI
产品状态 active and preferred
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 960
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
TH
晶圆产地
US

产品状态
Active
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
封装尺寸 960
封装类型 TRAY
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
TH
晶圆产地
US
CY62137FV18LL-55BVXI is a 2-Mbit (128K × 16) high-performance CMOS SRAM for portable, battery-powered designs. It operates from 1.65 V to 2.25 V over -40°C to +85°C and delivers 55 ns access time. Automatic power-down reduces current when addresses are not toggling, and standby is 1 µA typical (5 µA max). Typical active current is 1.6 mA at 1 MHz. It is supplied in a Pb-free 48-ball VFBGA package.

特性

  • 128K × 16 CMOS static RAM
  • 55 ns read cycle time (tRC)
  • 45 ns write cycle time (tWC)
  • 1.65 V to 2.25 V VCC range
  • 1 µA typ standby current (ISB)
  • 5 µA max standby current (ISB)
  • 1.6 mA typ ICC at 1 MHz
  • Auto power-down when deselected
  • BLE/BHE byte enables for 8-bit
  • Tri-state I/O with OE control

产品优势

  • 16-bit bus cuts access cycles
  • 55 ns access supports fast MCU
  • 45 ns write boosts throughput
  • Fits low-voltage 1.8 V rails
  • 1 µA standby extends battery life
  • 5 µA max eases sleep budgeting
  • Low active ICC reduces heat
  • Auto power-down saves energy
  • Byte writes cut bus switching power
  • Tri-state bus enables easy expansion

应用

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