IAUTN04S7N005
现货，推荐
符合RoHS标准

IAUTN04S7N005

OptiMOSTM7 40V TOLL 10x12 New benchmark for best-in-class Ron, highest power density & efficiency
数据手册
封装

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IAUTN04S7N005
IAUTN04S7N005
数据手册


商品详情

  • 最高 ID (@25°C)
    350 A
  • 最高 QG (typ @10V)
    166 nC
  • QG (typ @10V)
    127 nC
  • 最高 RDS (on) (@10V)
    0.44 mΩ
  • 最高 VDS
    40 V
  • VGS(th) 范围
    2.2 V 至 3 V
  • VGS(th)
    2.6 V
  • 封装
    PG‑HSOF‑8
  • 工作温度 范围
    -55 °C 至 175 °C
  • 技术
    OptiMOS™-7
  • 极性
    N
  • 目前计划的可用性至少到
    2038
  • 质量等级
    Automotive

推荐的
OPN
IAUTN04S7N005ATMA1
产品状态 active and preferred
英飞凌封装名称
PG-HSOF-8
封装名 N/A
封装尺寸 2000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes

产品状态
Active
英飞凌封装名称
PG-HSOF-8
封装名 -
封装尺寸 2000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
Automotive standard TOLL 10x12 (PG-HSOF-8) offers highest current capability of 350A at a footprint of 10x12mm2. In combination with Infineon’s leading OptiMOSTM7 40V Power MOSFET technology it offers best in class power density and power efficiency at Infineon’s high-quality level for robust automotive packages.

特性

  • Ultra low RDS
  • High Avalanche capability
  • High SOA ruggedness
  • Fast switching times (turn on/off)
  • Leadless Packages w/ Cu-Clip
  • Leading thin wafer Cu-technology
  • Leading 300mm in-house production

产品优势

  • Highest power density
  • Highest current capability
  • Improved design ruggedness
  • Superior switching performance
  • High Efficient cooling
  • High Automotive quality product design
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