IJCQ120RM50J1
即将推出
即将推出
符合RoHS标准
无铅

IJCQ120RM50J1

CoolSiC™ JFET discrete 1200 V G1 in top-side cooled Q-DPAK package
数据手册
封装

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IJCQ120RM50J1
IJCQ120RM50J1
数据手册


商品详情

  • 最高 ID (@25°C)
    613 A
  • RDS (on) (@ Tj = 25°C)
    5 mΩ
  • 最高 VDS
    1200 V
  • 封装
    Q-DPAK
  • 工作温度 范围
    -55 °C 至 175 °C
  • 技术
    CoolSiC™ JFET
  • 质量等级
    Industrial

OPN
IJCQ120RM50J1XTMA1
产品状态 coming soon
英飞凌封装名称
PG-HDSOP-22
封装名 Q-DPAK
封装尺寸 750
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
MY
晶圆产地
AT,MY

产品状态 coming soon
英飞凌封装名称
PG-HDSOP-22
封装名 Q-DPAK
封装尺寸 750
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
封装产地
MY
晶圆产地
AT,MY
CoolSiC™ JFET 1200 V in a Q-DPAK top-side-cooled package. Its low 5.0 mΩ typical RDS enables efficient current conduction in solid-state power-distribution and protection applications. High-current avalanche and surge-current ruggedness, linear-mode capability and overload operation up to a junction temperature of 200°C support demanding protection functions. The surface-mount package enables automated assembly and flexible top-side cooling.

特性

  • 1200 V drain-source blocking voltage
  • Ultra-low RDS
  • Normally-on SiC JFET technology
  • High-current avalanche ruggedness
  • Surge-current ruggedness
  • Linear-mode capability
  • Overload operation up to Tj = 200°C
  • Q-DPAK top-side-cooled package
  • compatible with automated assembly

产品优势

  • Minimized conduction losses
  • Reduced thermal-management effort
  • Higher power density
  • Robust overload/ surge-current handling
  • Rugged inductive fault-energy handling
  • Support for linear-mode protection
  • Compact, automated system assembly

应用

文档

设计资源

合作伙伴解决方案

开发者社区