IMSQ120R078M2HH
新品
现货，推荐
符合RoHS标准
无铅

IMSQ120R078M2HH

新品
CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package
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封装

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IMSQ120R078M2HH
IMSQ120R078M2HH
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商品详情


推荐的
OPN
IMSQ120R078M2HHXUMA1
产品状态 active and preferred
英飞凌封装名称
PG-HDSOP-16
封装名 N/A
封装尺寸 750
封装类型 TAPE & REEL
湿度 2
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
MY
晶圆产地
MY

产品状态
Active
英飞凌封装名称
PG-HDSOP-16
封装名 -
封装尺寸 750
封装类型 TAPE & REEL
湿度 2
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
封装产地
MY
晶圆产地
MY
CoolSiC™ MOSFET discrete 1200 V, 78.1 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package, optimized for industrial applications such as EV charging, string inverters, and power supplies. The Q-DPAK enables lower system cost through simplified assembly and excellent thermal performance. Top-side cooled dual half-bridge design delivers improved cooling, higher energy efficiency, greater design flexibility, and enhanced overall performance.

特性

  • VDSS = 1200 V at Tvj = 25°C
  • IDDC = 22 A at TC = 100°C
  • RDS = 78.1 mΩ, VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage 4.2 V
  • Robust against parasitic turn on
  • Robust body diode for hard commutation
  • .XT interconnection technology

产品优势

  • Higher power density
  • Enabling automated assembly
  • Less complex designs needed
  • Outstanding thermal performance vs BSC
  • Improve system power losses
  • Enable a VRMS of 950 V with PD 2
  • Lower BOM cost
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