IQFH99N06NM5
现货，推荐
符合RoHS标准

IQFH99N06NM5

OptiMOS™ 5 60 V power MOSFETs in compact, high performance PQFN 8x6 package with very-low RDS(on)
数据手册
封装

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IQFH99N06NM5
IQFH99N06NM5
数据手册

商品详情

  • 最高 ID (@25°C)
    339 A
  • QG (typ @10V)
    115 nC
  • 最高 RDS (on) (@10V)
    0.99 mΩ
  • 最高 VDS
    60 V
  • VGS(th) 范围
    2.1 V 至 3.3 V
  • VGS(th)
    2.8 V
  • 封装
    PQFN 8x6
  • 工作温度 范围
    -55 °C 至 175 °C
  • 极性
    N
推荐的
OPN
IQFH99N06NM5ATMA1
产品状态 active and preferred
英飞凌封装名称
PG-TSON-12
封装名 N/A
封装尺寸 3000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes

产品状态
Active
英飞凌封装名称
PG-TSON-12
封装名 -
封装尺寸 3000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
This 60 V normal-level power MOSFET comes in our latest innovative, compact clip-based PQFN 8x6 mm² package enabling very high current and power levels. The part offers ultra-low RDS(on) of 0.68 mΩ combined with outstanding thermal performance. This enables higher system efficiency and power density for a large variety of end applications like battery-powered applications, battery management, low-voltage drives and SMPS.

特性

  • Cutting edge OptiMOS™ silicon technology
  • High chip/package ratio
  • Ultra high currents in compact footprint
  • Ultra-low package parasitics
  • Optimized lead-frame and Cu-Clip design
  • Footprint compatibility with PQFN 5x6
  • Compact layout with less paralleling

产品优势

  • Minimized conduction losses
  • High power capability
  • Superior device performance
  • Reduced voltage overshoot
  • Superior thermal performance
  • Re-use board for multiple power level
  • Superior switching performance/EMI
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