ISC011N04LM7SC
新品
现货，推荐
符合RoHS标准

ISC011N04LM7SC

新品
OptiMOS™ 7 40 V switching optimized power MOSFET in PQFN 5x6 Dual-Side Cooled (DSC) package
数据手册
封装

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ISC011N04LM7SC
ISC011N04LM7SC
数据手册


商品详情

  • 最高 ID (@25°C)
    255 A
  • QG (typ @10V)
    43 nC
  • 最高 RDS (on) (@4.5V)
    1.45 mΩ
  • 最高 RDS (on) (@10V)
    1.1 mΩ
  • Special Features
    Dual-Side Cooling
  • 最高 VDS
    40 V
  • VGS(th) 范围
    1.7 V 至 1.1 V
  • VGS(th)
    1.4 V
  • VGS 范围
    -12 V 至 12 V
  • 封装
    SuperSO8 5x6 DSC
  • 工作温度 范围
    -55 °C 至 175 °C
  • 极性
    N

推荐的
OPN
ISC011N04LM7SCATMA1
产品状态 active and preferred
英飞凌封装名称
PG-WSON-8
封装名 SuperSO8 5x6 DSC
封装尺寸 4000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
封装产地
MY
晶圆产地
AT

产品状态
Active
英飞凌封装名称
PG-WSON-8
封装名 SuperSO8 5x6 DSC
封装尺寸 4000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
封装产地
MY
晶圆产地
AT
Infineon’s latest OptiMOS™ 7 ISC011N04LM7SC 40 V switching-optimized MOSFET delivers an exceptional balance of efficiency and switching performance. Combining 1.1 mΩ RDS(on) with only 20 nC Qg at 4.5 V and 49 nC QOSS, it enables lower switching losses, higher switching frequencies and increased power density. Optimized for GaN-compatible gate drive voltages, it is ideal for high current DC-DC, IBC and 48 V conversion.

特性

  • Switching-optimized OptiMOS™ 7
  • Ultra-low 20 nC Qg
  • 3.2 nC Qgd
  • 49 nC QOSS
  • 255 A current capability
  • High-frequency optimized
  • GaN-drive compatible

产品优势

  • Maximize efficiency and power density
  • Minimize gate-drive power
  • Enable ultra-fast switching
  • Reduce switching losses
  • Compact high-power performance
  • Enable smaller magnetics
  • Future-proof platform designs
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