现货，推荐
符合RoHS标准

ISC016N08NM8SC

OptiMOS™ 8 n-channel power MOSFET 80 V in SuperSO8 DSC package with dual-side cooling (DSC)
数据手册
封装

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ISC016N08NM8SC
ISC016N08NM8SC
数据手册

商品详情

  • 最高 ID (@25°C)
    241 A
  • 最高 Ptot (@25°C)
    211 W
  • 最高 QG (typ @10V)
    99 nC
  • 最高 RDS (on) (@10V)
    1.64 mΩ
  • 最高 VDS
    80 V
  • 最低 VGS(th)
    -20 V
  • VGS(th)
    20 V
  • 封装
    SuperSO8 5x6 DSC
  • 工作温度 范围
    -55 °C 至 175 °C
  • 极性
    N
  • 特殊功能
    Dual-Side Cooling
推荐的
OPN
ISC016N08NM8SCATMA1
产品状态 active and preferred
英飞凌封装名称
PG-WSON-8
封装名 SuperSO8 5x6 DSC
包装尺寸 4000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
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产品状态
Active
英飞凌封装名称
PG-WSON-8
封装名 SuperSO8 5x6 DSC
包装尺寸 4000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
The OptiMOS™ 8 power MOSFET in SuperSO8 DSC (dual-side cooling) package offers all thermal management benefits of dual-side cooling solutions with an industry-standard footprint.

特性

  • Very low on-resistance
  • High-performance silicon technology
  • Compatible with PQFN 5x6
  • Industry-standard footprint

产品优势

  • High system efficiency
  • Superior power handling capability
  • High power density designs
  • Improved reliability
  • Longer lifetime

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