ISC300N20NM6
现货，推荐
符合RoHS标准

ISC300N20NM6

OptiMOS™ 6 power MOSFET 200 V normal level in SuperSO8 package
数据手册
封装

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ISC300N20NM6
ISC300N20NM6
数据手册

商品详情

  • 最高 ID (@25°C)
    44 A
  • 最高 IDpuls
    176 A
  • QG (typ @10V)
    17 nC
  • 最高 RDS (on) (@10V)
    30 mΩ
  • 最高 VDS
    200 V
  • VGS(th) 范围
    3 V 至 4.5 V
  • VGS(th)
    3.7 V
  • 封装
    SuperSO8 5x6
  • 工作温度 范围
    -55 °C 至 175 °C
  • 极性
    N
推荐的
OPN
ISC300N20NM6ATMA1
产品状态 active and preferred
英飞凌封装名称
PG-TDSON-8
封装名 SuperSO8 5x6
封装尺寸 5000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes

产品状态
Active
英飞凌封装名称
PG-TDSON-8
封装名 SuperSO8 5x6
封装尺寸 5000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
ISC300N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. The OptiMOS™ 6 200 V technology was designed to fullfill the requirements of a wide range of applications: from static swiching to high frequency in hard and soft switching applications.

特性

  • Industries lowest RDS(on) in 200 V
  • Industries lowest Qrr in 200 V
  • Compared to previous 200 V technology
  • Up to 42 % lower RDS(on)
  • Up to 89% lower Qrr(typ)
  • 36% lower FOMg
  • More than 3 times softer diode
  • Improved capacitance linearity
  • Improved SOA
  • Tight Vgs(th) spread of +/-750 mV
  • High avalanche ruggedness
  • Max Tj of 175°C and MSL1

产品优势

  • Low conduction and switching losses
  • Stable operation with improved EMI
  • Better current sharing when paralleling
  • Enhanced robustness
  • Improved system reliability

应用

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