ISCH65N04LM7SC
新品
现货，推荐
符合RoHS标准

ISCH65N04LM7SC

新品
OptiMOS™ 7 40 V switching optimized power MOSFET in PQFN 5x6 Dual-Side Cooled (DSC) package
数据手册
封装

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ISCH65N04LM7SC
ISCH65N04LM7SC
数据手册


商品详情

  • 最高 ID (@25°C)
    424 A
  • Qgd
    5.8 nC
  • QG (typ @4.5V)
    39 nC
  • QG (typ @10V)
    84 nC
  • 最高 RDS (on) (@10V)
    0.65 mΩ
  • 最高 RDS (on) (@4.5V)
    0.83 mΩ
  • Special Features
    Dual-Side Cooling
  • 最高 VDS
    40 V
  • VGS(th) 范围
    1.1 V 至 1.7 V
  • VGS(th)
    1.4 V
  • 封装
    SuperSO8 5x6 DSC
  • 工作温度 范围
    -55 °C 至 175 °C
  • 极性
    N

推荐的
OPN
ISCH65N04LM7SCATMA1
产品状态 active and preferred
英飞凌封装名称
PG-WSON-8
封装名 SuperSO8 5x6 DSC
封装尺寸 4000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
封装产地
MY
晶圆产地
AT

产品状态
Active
英飞凌封装名称
PG-WSON-8
封装名 SuperSO8 5x6 DSC
封装尺寸 4000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
封装产地
MY
晶圆产地
AT
Infineon’s latest OptiMOS™ 7 ISCH65N04LM7SC 40 V MOSFET combines low 0.65 mΩ RDS(on) with outstanding switching performance to maximize efficiency in high power systems. Featuring only 39 nC Qg at 4.5 V and 94 nC QOSS, it enables lower switching losses, higher switching frequencies and increased power density. Optimized for GaN-compatible gate drive voltages, it is ideal for high current DC-DC, IBC and 48 V conversion.

特性

  • Switching-optimized OptiMOS™ 7
  • Low 0.65 mΩ RDS(on)
  • 424 A current capability
  • -17% lower Qg vs. 0.7 mΩ OptiMOS™ 6
  • -49% lower Qgd vs. 0.7 mΩ OptiMOS™ 6
  • -9% lower Qoss vs 0.7 mΩ OptiMOS™ 6
  • Logic-level gate drive
  • GaN-drive compatible
  • High-frequency optimized
  • Low thermal resistance

产品优势

  • Maximize efficiency and power density
  • Minimized conduction losses
  • Enable maximum power output
  • Reduce gate-drive losses*
  • Accelerate switching speed*
  • Improved efficiency*
  • Simplify system integration
  • Future-proof platform designs
  • Increase power density
  • Enable cooler operation
  • *vs. 0.7 mΩ OptiMOS™ 6
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