ISCH69N04LM7SC
新品
现货，推荐
符合RoHS标准

ISCH69N04LM7SC

新品
OptiMOS™ 7 40 V switching optimized power MOSFET in PQFN 5x6 Dual-Side Cooled (DSC) package
数据手册
封装

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

ISCH69N04LM7SC
ISCH69N04LM7SC
数据手册


商品详情

  • 最高 ID (@25°C)
    380 A
  • QG (typ @10V)
    32 nC
  • 最高 RDS (on) (@4.5V)
    0.9 mΩ
  • 最高 RDS (on) (@10V)
    0.69 mΩ
  • Special Features
    Dual-Side Cooling
  • 最高 VDS
    40 V
  • VGS(th) 范围
    1.1 V 至 1.7 V
  • VGS(th)
    1.4 V
  • 封装
    SuperSO8 5x6 DSC
  • 工作温度 范围
    -55 °C 至 175 °C
  • 极性
    N

推荐的
OPN
ISCH69N04LM7SCATMA1
产品状态 active and preferred
英飞凌封装名称
PG-WSON-8
封装名 SuperSO8 5x6 DSC
封装尺寸 4000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
封装产地
MY
晶圆产地
AT

产品状态
Active
英飞凌封装名称
PG-WSON-8
封装名 SuperSO8 5x6 DSC
封装尺寸 4000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
封装产地
MY
晶圆产地
AT
Infineon’s latest OptiMOS™ 7 40 V switching-optimized MOSFET delivers a new level of efficiency for power conversion. Compared to the previous-generation OptiMOS™ 6 BSC007N04LS6SC, it achieves up to 56% lower Qgd, 36% better RDS(on) 4,5 × Qg FOM and 24% lower QOSS, enabling lower switching losses, higher switching frequencies and increased power density in high power DC-DC converters, HVIBC and 48 V conversion.

特性

  • Switching-optimized OptiMOS™ 7
  • 56% lower Qgd vs. 0.7 mΩ OptiMOS™ 6
  • -36% RDS(on)×Qg FOM vs. 0.7mΩ OptiMOS™ 6
  • -29% Qg vs. 0.7 mΩ OptiMOS™ 6
  • -24% Qoss vs. 0.7 mΩ OptiMOS™ 6
  • 380 A current capability
  • GaN-drive compatible

产品优势

  • Maximize efficiency and power density
  • Minimize switching losses and EMI
  • Increase power density
  • Reduce gate-drive losses
  • Improve soft-switching efficiency
  • Support demanding conversion stages
  • Future-proof platform designs
文档

设计资源

合作伙伴解决方案

开发者社区