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Next Generation 1200V IGBT and Diode Technology for Automotive Drivetrain Applications

The shift to higher battery voltages in electric vehicles (600–900V) is driving demand for 1200V power semiconductors. Leveraging Micro Pattern Trench (MPT) technology, Infineon’s latest 1200V IGBT and diode technologies achieve a 22% reduction in inverter losses and a power density increase of up to 34% compared to the previous generation. These advancements are enabled by improved conduction performance, faster switching, and an increased maximum junction temperature of 185°C. To address diverse requirements, both a chipset (IGBT + diode) and a reverse-conducting (RC)-IGBT variant are offered, offering flexibility for next-generation EV powertrain systems.

• 570.19 KB
• 01/12/2025