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Advanced gate drive options for silicon carbide (SiC) MOSFETs using EiceDRIVER

This application note discusses the basic parameters of silicon carbide (SiC) MOSFETs and derives gate drive requirements. The document covers the following EiceDRIVER™ isolated and level-shift gate driver ICs: • EiceDRIVER™ Compact isolated gate driver: o 1ED3122MC12H, 1ED3124MC12H, 1ED3124MU12F, 1ED3127MU12F, 1ED3142MU12F, 1ED3241MC12H, 1ED3251MC12H • EiceDRIVER™ Enhanced isolated gate driver: o 1ED3321MC12N, 1ED3491MC12M, 1ED3890MC12M • EiceDRIVER™ silicon-on-insulator (SOI) level-shift gate driver: o 2ED1323S12P These gate driver IC families provide galvanic isolation based on a coreless transformer, or junction isolation based on silicon-on-insulator. Power transistors rated up to 2300 V with ultrafast switching capability can be handled optimally through these gate drivers. Therefore, this document concentrates mainly on suitable levelshift (1200 V) and galvanically isolated gate driver ICs (2300 V). Please note that Infineon’s advanced CoolSiC™ Trench MOSFET technology offers various benefits that reduce the complexity of gate driving. These benefits are mentioned in detail in this document. Also refer to other application notes that highlight the properties of CoolSiC™. Note: This document does not refer to the SiC bipolar transistors or the SiC JFETs.

• 835.85 KB
• 12/04/2024