现货，推荐
符合RoHS标准
无铅

1EDR3146HQE

5.7 kV (rms) single-channel gate driver IC with AEC-Q100 qualification, reinforced isolation, 6.5 A output current, 15 V UVLO
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1EDR3146HQE
1EDR3146HQE
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OPN
1EDR3146HQEXUMA1
产品状态 active and preferred
英飞凌封装名称
PG-LDSO-8
封装名 N/A
包装尺寸 1500
包装类型 TAPE & REEL
湿度 2
防潮包装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称
PG-LDSO-8
封装名 -
包装尺寸 1500
包装类型 TAPE & REEL
湿度 2
防潮包装 DRY
无铅
无卤素
符合 RoHS 标准
EiceDRIVER™ Compact 2300 V single-channel isolated gate driver with +/-6.5 A typical peak output current in an 8-pin DSO wide body package for GaN HEMTs, IGBTs, MOSFETs and SiC MOSFETs. Qualified according to AEC-Q100. Offers secondary ground pin as a reference for enhanced UVLO protection with bipolar supply configuration.

特性

  • For up to 2300 V Switches
  • 2300 V input-output functional isolation
  • Galvanically isolated coreless xformer
  • 35 V abs. max. output supply voltage
  • Up to 17 V input supply voltage
  • 34 ns typ propogation delay
  • 14.75 V / 16.0 V UVLO protection
  • CTI 600 Package with 8 mm creepage
  • Secondary Ground Pin
  • Product validation according to AEC-Q100

产品优势

  • PMOS Output for Reduced Switching Losses
  • Strong 6.5 A output stage
  • Best-in-class CMTI of > 300 kV/µs
  • 8 mm input-to-output
  • Max. 8 ns Part-to-part prop delay skew+
  • IEC 60747-17 (planned), UL 1577
  • VIORM = 1767 V (peak, reinforced)
  • VISO = 5.7 kV (rms) for 1 min
  • UVLO options for GaN, Si, IGBT, SiC
  • Pin-to-pin package option

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