即将推出
符合RoHS标准
无铅

2EDL2504F65

The 2EDL2504 is a 650 V half-bridge gate driver with +0,25 A & -0,5 A output current capability and overcurrent protection integrated in DSO-8 package
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封装

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2EDL2504F65
2EDL2504F65
数据手册

商品详情

  • 最高 Iout
    0.5 A
  • 认证标准
    Industrial
  • 最高 输入信号电压
    12.3 V
  • 输入信号电压 范围
    12.3 V 至 20 V
  • 输出电压 范围
    0 V 至 20 V
  • 输出的数量
    2
OPN
2EDL2504F65XUMA1
产品状态 coming soon
英飞凌封装名称
PG-DSO-8
封装名 N/A
包装尺寸 2500
包装类型 TAPE & REEL
湿度 3
防潮包装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态 coming soon
英飞凌封装名称
PG-DSO-8
封装名 -
包装尺寸 2500
包装类型 TAPE & REEL
湿度 3
防潮包装 DRY
无铅
无卤素
符合 RoHS 标准
The 2EDL2504 is a 650 V half-bridge gate driver. Its Infineon thin-film-SOI technology provides excellent ruggedness and noise immunity. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 650 V. This driver has cross-conduction prevention with built in interlock lock logic and fully integrated overcurrent protections. It is offered in DSO-8 package.

特性

  • Infineon thin-film-SOI-technology
  • Fully operational to +650 V
  • Integrated DESAT protection
  • Current capability +0.25 A / -0.5 A
  • Propagation delay typ of 50 ns
  • Integrated Bootstrap Diode
  • Negative voltage immunity up to -100 V
  • dV/dt immune ±50 V
  • Maximum supply voltage of 25 V

产品优势

  • Simple fully protected solution
  • Reduced BOM
  • Semplify customer design
  • Increase system reliability

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