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符合RoHS标准

2EDL5012AA-U2D

The 2EDL5012AA-U2D is a 120 V half-bridge gate driver designed to drive GaN transistors as well as logic level MOSFETs
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2EDL5012AA-U2D
2EDL5012AA-U2D
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商品详情

  • Iout 范围
    1.5 A 至 4 A
  • 认证标准
    Industrial
  • 输入信号电压 范围
    4.5 V 至 5.5 V
  • 输出电压 范围
    0 V 至 5.5 V
  • 输出的数量
    2
OPN
产品状态 coming soon
英飞凌封装名称 PG-TSNP-12
封装名 N/A
包装尺寸 5000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态 coming soon
英飞凌封装名称 PG-TSNP-12
封装名 -
包装尺寸 5000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
The 2EDL5012AA-U2D is a half-bridge gate driver designed to drive both the high-side and the low-side enhancement mode GaN transistors as well as logic level MOSFETs in a synchronous buck or half-bridge configuration. The 2EDL5012AA-U2D has different output current capabilities from 1.5 A peak to 4 A peak and it is available in TSNP-12 pins 2 mm x 2 mm package.

特性

  • Dual independent inputs
  • UVLO for both high- and low-side drivers
  • Integrated bootstrap switch
  • Active bootstrap switch
  • Maximum bootstrap voltage of 120 V
  • Split outputs for better output strength
  • 4 A/4 A, 1.5 A/4 A and 1.5 A/1.5 A
  • Built-in active Miller clamp
  • 20 ns typical propagation delay
  • 1 ns typical propagation delay matching
  • 4.5 V to 5.5 V supply voltage range
  • Offered in TSNP-12 2x2 package

产品优势

  • Support wide range of power topologies
  • Compact and thermally capable solution
  • Suitable for high power applications
  • Flexible for many customer requirements

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