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符合RoHS标准

2EDL901G3

EiceDRIVER™ 120 V Level shifter gate driver IC that is designed to drive dual high-side, dual low-side or half-bridge configurations of MV GaN HEMT
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2EDL901G3
2EDL901G3
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商品详情

  • 认证标准
    Industrial
  • 输入Vcc 范围
    3.8 V 至 13.2 V
  • 输出电压 范围
    0 V 至 5.5 V
  • 最高 输出电流
    1.6 A
  • 通道数
    2
OPN
产品状态 coming soon
英飞凌封装名称 PG-TSNP-16
封装名 N/A
包装尺寸 3000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态 coming soon
英飞凌封装名称 PG-TSNP-16
封装名 -
包装尺寸 3000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
The EiceDRIVER™ 2EDL901G3 is a dual-channel level shifter gate driver IC with dual floating outputs to drive MV GaN HEMT. This strong 1.6 A/6 A source/sink current dual-channel gate driver has an integrated current sense amplifier. It also has a programmable deadtime and mode of operations such as tri-state single PWM mode, HSCC HS mode, HSCC LS mode, Hi/Li inverted mode, and Hi/Li mode. It is available in 16 pins 3x3 mm package.

特性

  • Dual-channel floating output gate driver
  • Strong 1.6 A source and 6 A sink current
  • Configurable deadtime or turn-on delay
  • Integrated current sense amplifier
  • Configurable mode of operations
  • 4 V - 13.2 V Supply on each output channel
  • 5 V Gate clamp on both output driving voltage

产品优势

  • Support wide range of power topologies
  • Compact and thermally capable solution
  • Suitable for high power applications
  • Flexible for many customer requirements

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