新品
现货，推荐
符合RoHS标准

AIGBG25N120S7

新品
Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
数据手册
封装

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AIGBG25N120S7
AIGBG25N120S7
数据手册

商品详情

  • Eon max
    0.3 mJ
  • IC (@ 100°) max
    37 A
  • IC (@ 25°) max
    55 A
  • ICpuls max
    75 A
  • Ptot max
    250 W
  • QGate max
    158 nC
  • td(on) max
    14.5 ns
  • tr max
    5.8 ns
  • VCE(sat) max
    1.65 V
  • VCE max
    1200 V
  • 封装
    D2PAK (TO-263-7)
推荐的
OPN
AIGBG25N120S7ATMA1
产品状态 active and preferred
英飞凌封装名称
PG-TO263-7
封装名 D2PAK 7-pin
包装尺寸 1000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称
PG-TO263-7
封装名 D2PAK 7-pin
包装尺寸 1000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
1200 V TRENCHSTOP ™ IGBT7 S7 portfolio is the optimal choice for automotive auxiliary drive applications

特性

  • Low saturation voltage VCE(sat) = 2.0 V at Tvj=175 °C
  • Wide range of dv/dt controllability
  • 4 µsec short circuit robustness and humidity robustness
  • Single IGBT
  • Higher pulse current 3xInom capability
  • Very good performance at low - mid switching frequency range (8-16kHz)
  • Higher power density
  • Automotive qualification

产品优势

  • Ideal for high voltage auxiliary drive applications and 800 V OBC
  • Simple and lower cost gate driver circuit design
  • Improved thermal performance and reduced cooling efforts
  • Easier assembly & reduced system cost through high creepage distance
  • 15A and 25A versions to address exact customer requirements

应用

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设计资源

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