AIGBG25N120S7
现货，推荐
符合RoHS标准

AIGBG25N120S7

Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology
数据手册
封装

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AIGBG25N120S7
AIGBG25N120S7
数据手册


商品详情

  • 最高 Eon
    0.3 mJ
  • 最高 IC (@ 100°)
    37 A
  • 最高 IC (@ 25°)
    55 A
  • 最高 ICpuls
    75 A
  • 最高 Ptot
    250 W
  • 最高 QGate
    158 nC
  • 最高 td(on)
    14.5 ns
  • 最高 tr
    5.8 ns
  • 最高 VCE(sat)
    1.65 V
  • 最高 VCE
    1200 V
  • 封装
    D2PAK (TO-263-7)

推荐的
OPN
AIGBG25N120S7ATMA1
产品状态 active and preferred
英飞凌封装名称
PG-TO263-7
封装名 D2PAK 7-pin
封装尺寸 1000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅 No
无卤素 Yes
符合RoHS标准 Yes

产品状态
Active
英飞凌封装名称
PG-TO263-7
封装名 D2PAK 7-pin
封装尺寸 1000
封装类型 TAPE & REEL
湿度 1
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
1200 V TRENCHSTOP ™ IGBT7 S7 portfolio is the optimal choice for automotive auxiliary drive applications

特性

  • Low saturation voltage VCE(sat) = 2.0 V at Tvj=175 °C
  • Wide range of dv/dt controllability
  • 4 µsec short circuit robustness and humidity robustness
  • Single IGBT
  • Higher pulse current 3xInom capability
  • Very good performance at low - mid switching frequency range (8-16kHz)
  • Higher power density
  • Automotive qualification

产品优势

  • Ideal for high voltage auxiliary drive applications and 800 V OBC
  • Simple and lower cost gate driver circuit design
  • Improved thermal performance and reduced cooling efforts
  • Easier assembly & reduced system cost through high creepage distance
  • 15A and 25A versions to address exact customer requirements

应用

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