现货，推荐
符合RoHS标准
无铅

AIMBG120R030M1

CoolSiC™ Automotive MOSFET 1200V G1p in D2PAK-7 package
数据手册
封装
每件.
有存货

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AIMBG120R030M1
AIMBG120R030M1
每件.
数据手册

商品详情

  • Ciss
    1738 pF
  • Coss
    82 pF
  • ID (@25°C) max
    58 A
  • Ptot (@ TA=25°C) max
    230 W
  • QG
    57 nC
  • RDS (on) (@ Tj = 25°C)
    30 mΩ
  • RthJC max
    0.45 K/W
  • VDS max
    1200 V
  • VGSS, off
    0
  • VGSS, on
    20
  • 封装
    TO-263-7
  • 工作温度
    -55 °C to 175 °C
  • 技术
    CoolSiC™ G1
  • 推出年份
    2023
  • 极性
    N
  • 目前计划的可用性至少到
    2033
  • 认证标准
    Automotive
推荐的
OPN
AIMBG120R030M1XTMA1
产品状态 active and preferred
英飞凌封装名称
PG-TO263-7
封装名 D2PAK 7-pin
包装尺寸 1000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:
 每件. 有存货

产品状态
Active
英飞凌封装名称
PG-TO263-7
封装名 D2PAK 7-pin
包装尺寸 1000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
每件.
有存货
With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

特性

  • 可评估单通道/双通道设备
  • 一块板子适合全家人
  • 模块化设计，可快速轻松地更换 PROFET ™ + 系列内的负载和设备
  • 轻松指示哪个开关针对给定负载进行了优化
  • 启动时仅需一个电源
  • 所有逻辑引脚均可直接在电路板上切换
  • 还兼容外部逻辑电压源

文档

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