AIMC75R007D31M2P
新品
现货，推荐
符合RoHS标准
无铅

AIMC75R007D31M2P

新品
Unleashing the Power of Infineon's Cutting-Edge SiC Trench Technology

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AIMC75R007D31M2P
AIMC75R007D31M2P


商品详情

  • Layout
    corner gate
  • Metallization (Frontside)
    Sinter
  • Metallization (Backside)
    Sinter
  • 最高 电压等级
    750 V
  • 电压等级
    750 V
  • 芯片尺寸
    25 mm²

推荐的
OPN
AIMC75R007D31M2PX7SA1
产品状态 active and preferred
英飞凌封装名称 --
封装名 N/A
封装尺寸 1
封装类型 HORIZONTAL FRAME SHIPPER
湿度 N/A
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
晶圆产地
AT,MY

产品状态
Active
英飞凌封装名称 --
封装名 -
封装尺寸 1
封装类型 HORIZONTAL FRAME SHIPPER
湿度 -
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
晶圆产地
AT,MY
Our latest automotive Gen2pE devices offer voltage classes of 750 V and 1200 V, delivering unprecedented performance for main inverter applications in high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our SiC solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.

特性

  • High efficiency and power density
  • State-of-the-art trench design
  • Various metal stack options
  • Superior gate-oxide reliability

产品优势

  • Ideal for automotive requirements
  • Available in 750 V class
  • Customized development (on demand)
  • Cost benefit due to module shrink

应用

文档

设计资源

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