现货，推荐
符合RoHS标准
无铅

CY62147G30-45BVXI

数据手册
封装

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CY62147G30-45BVXI
CY62147G30-45BVXI
数据手册

商品详情

  • 密度
    4 MBit
  • 峰值回流温度
    260 °C
  • 工作温度
    -40 °C to 85 °C
  • 工作电压
    2.2 V to 3.6 V
  • 引线球表面
    Sn/Ag/Cu
  • 接口
    Parallel
  • 目前计划的可用性至少到
    2033
  • 系列
    MoBL™ SRAM
  • 组织(X x Y)
    256K x 16
  • 认证标准
    Industrial
推荐的
OPN
CY62147G30-45BVXI
产品状态 active and preferred
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
包装尺寸 960
包装类型 TRAY
湿度 3
防潮包装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称
PG-VFBGA-48
封装名 VFBGA-48 (51-85150)
包装尺寸 960
包装类型 TRAY
湿度 3
防潮包装 DRY
无铅
无卤素
符合 RoHS 标准
The CY62147G30-45BVXI is a 4-Mbit (256K × 16-bit) high-performance CMOS static RAM with embedded ECC for single-bit error correction, ensuring reliable data integrity in industrial applications. Operating from 2.2 V to 3.6 V with a fast 45 ns access time, it features ultra-low standby current down to 3.5 μA, 1.0-V data retention, and TTL-compatible I/O.

特性

  • 4-Mbit (256K × 16) SRAM with ECC
  • 45 ns access time
  • 2.2 V–3.6 V supply voltage range
  • Ultra-low standby current: 3.5 μA typ, 8.7 μA
  • 15 mA typ active current at 22.22 MHz
  • Embedded single-bit error correction
  • TTL-compatible I/O
  • Byte power-down feature
  • Industrial temperature range: –40°C to 85°C
  • Single chip enable operation

产品优势

  • ECC improves data reliability
  • 45 ns speed enables fast memory access
  • Wide voltage range supports flexible designs
  • Low standby current extends battery life
  • Low active current reduces power usage
  • Error correction prevents data loss
  • TTL I/O simplifies system integration
  • Byte power-down saves power in idle
  • Operates reliably in harsh environments
  • Simple chip enable eases control logic

应用

文档

文档

设计资源

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