CY7C1049GN30-10ZSXIT
现货,推荐
符合RoHS标准
无铅

CY7C1049GN30-10ZSXIT

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY7C1049GN30-10ZSXIT
CY7C1049GN30-10ZSXIT


商品详情

  • 密度
    4 MBit
  • 峰值回流温度
    260 °C
  • 工作温度 范围
    -40 °C 至 85 °C
  • 工作电压 (VCCQ) 范围
    2.2 V 至 3.6 V
  • 工作电压 范围
    2.2 V 至 3.6 V
  • 引线球表面
    Ni/Pd/Au
  • 接口
    Parallel
  • 目前计划的可用性至少到
    2033
  • 系列
    FAST SRAM
  • 组织(X x Y)
    512K x 8
  • 质量等级
    Industrial
  • 速度
    10 ns

OPN
CY7C1049GN30-10ZSXIT
产品状态 active and preferred
英飞凌封装名称
封装名 TSOP-II-44 (51-85087)
封装尺寸 1000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
PH
晶圆产地
TW

产品状态
Active
英飞凌封装名称
封装名 TSOP-II-44 (51-85087)
封装尺寸 1000
封装类型 TAPE & REEL
湿度 3
防潮封装 DRY
无铅
无卤素
符合 RoHS 标准
预估长期供货截止日期 2033
产品发布日期 03/2022
封装产地
PH
晶圆产地
TW
CY7C1049GN30-10ZSXIT is a 4-Mbit (512K × 8) fast asynchronous CMOS SRAM for parallel memory expansion. It operates from 2.2 V to 3.6 V over -40°C to 85°C and supports 10 ns access time. Reads use CE and OE; writes use CE and WE, with high-impedance I/Os when deselected. Automatic CE power-down reduces standby current to 8 mA max (ISB2); operating ICC is 45 mA max. 44-pin TSOP II Pb-free tape-and-reel.

特性

  • 512K × 8-bit SRAM organization
  • tAA access time down to 10 ns
  • VCC options: 1.65–5.5 V families
  • ICC 45 mA max at 100 MHz
  • ISB2 standby 8 mA max (CMOS)
  • ISB1 standby 15 mA max (TTL)
  • OE/CE/WE control read and write
  • Three-state I/O when deselected
  • Data retention at VCC = 1.0 V
  • ICCDR 8 mA max at VCC = 1.2 V
  • tRC read cycle time 10 ns
  • tDOE OE to data 4.5 ns max

产品优势

  • Fits 8-bit MCU memory maps
  • 10 ns access supports fast buses
  • Drop-in across 1.8/3.3/5 V rails
  • Predictable power at high speed
  • Lower standby draw in idle mode
  • TTL input mode eases interfacing
  • Simple async interface, no clock
  • High-Z I/O enables shared bus
  • Keeps data with backup supply
  • Low retention current saves energy
  • Short read cycle cuts latency
  • Fast OE improves bus turnarounds

应用

文档

设计资源

开发者社区