现货，推荐
符合RoHS标准
无铅

CYRS1049DV33-12FZMB

数据手册
封装

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CYRS1049DV33-12FZMB
CYRS1049DV33-12FZMB
数据手册

商品详情

  • 密度
    4 MBit
  • 峰值回流温度
    220 °C
  • 工作温度
    -55 °C to 125 °C
  • 工作电压 (VCCQ)
    3 V to 3.6 V
  • 工作电压
    3 V to 3.6 V
  • 引线球表面
    Ni/Au
  • 接口
    Parallel
  • 目前计划的可用性至少到
    2033
  • 系列
    FAST SRAM
  • 组织(X x Y)
    512K x 8
  • 认证标准
    Military
  • 设备重量
    3878.7 mg
  • 速度
    12 ns
推荐的
OPN
CYRS1049DV33-12FZMB
产品状态 active and preferred
英飞凌封装名称
CG-FP-36
封装名 FLATPACK-36 (001-67583)
包装尺寸 1
包装类型 CONTAINER
湿度 1
防潮包装 NON DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态
Active
英飞凌封装名称
CG-FP-36
封装名 FLATPACK-36 (001-67583)
包装尺寸 1
包装类型 CONTAINER
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
Infineon’s FAST 4-Mbit asynchronous Static RAMs designed with Infineon’s patented RADSTOP™ technology is well suited for space as well as other harsh environment applications. The 4-Mbit FAST SRAM is a high-performance, low power SRAM organized as 512 Kwords by 8-bits. For flight devices, order DLAM QML-V part number 5962F1123501VXC.

特性

  • 512-Kbit x8 bus-width configuration
  • 12 ns (125°C) access times
  • 3.3 V operating voltage
  • 55°C to +125°C military temperature grade
  • Bit-interleaving to eliminate multi-bit errors
  • Low active power
  • Low CMOS standby power
  • 2.0 V data retention
  • Automatic power-down when deselected
  • 36-pin Ceramic Flat Pack (CFP)
  • MIL-PRF 38535 compliant
  • QML-V qualified

应用

文档

文档

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