按需供应
符合RoHS标准
无铅

IGB110S10S1Q

CoolGaN™ Automotive Transistor 100 V G1 in PQFN 3x3, 11 mΩ
数据手册
封装

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IGB110S10S1Q
IGB110S10S1Q
数据手册

商品详情

  • ID (@25°C) max
    23 A
  • IDpuls (@25°C) max
    210 A
  • QG
    3.4 nC
  • RDS (on) (typ)
    9.4 mΩ
  • VDS max
    100 V
  • 环保认证
    RoHS compliant, Halogen free
  • 认证标准
    Automotive
OPN
IGB110S10S1QXTMA1
产品状态 on request
英飞凌封装名称
PG-TSON-4
封装名 N/A
包装尺寸 5000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
Infineon stock last updated:

产品状态 on request
英飞凌封装名称
PG-TSON-4
封装名 -
包装尺寸 5000
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
The IGB110S10S1Q is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. The device is qualified according to the AEC-Q101 standard and thanks to its low on-state resistance, it is the ideal choice for reliable performance in a broad range of automotive applications.

特性

  • AEC-Q101 qualified
  • 100 V e-mode power transistor
  • Dual-side cooled package
  • No reverse recovery charge
  • Ultra-low figures of merit

产品优势

  • Best-in-class power density
  • Highest efficiency
  • Improved thermal management
  • Enabling smaller and lighter designs
  • Excellent reliability
  • Lowering BOM cost

文档

文档

设计资源

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