IJZC120RM50J1
即将推出
即将推出
符合RoHS标准
无铅

IJZC120RM50J1

CoolSiC™ JFET discrete 1200 V G1 in TO-247 package
封装

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IJZC120RM50J1
IJZC120RM50J1


商品详情

  • ID (@25°C)
    212 A
  • RDS (on) (@ Tj = 25°C)
    5 mΩ
  • 最高 VDS
    1200 V
  • 封装
    TO-247
  • 工作温度 范围
    -55 °C 至 175 °C
  • 技术
    CoolSiC™ JFET
  • 极性
    N
  • 质量等级
    Industrial

OPN
IJZC120RM50J1XKSA1
产品状态 coming soon
英飞凌封装名称
PG-TO247-4
封装名 TO-247-4 HC 8.8mm
封装尺寸 240
封装类型 TUBE
湿度 NA
防潮封装 NON DRY
无铅 Yes
无卤素 Yes
符合RoHS标准 Yes
封装产地
CN
晶圆产地
AT,MY

产品状态 coming soon
英飞凌封装名称
PG-TO247-4
封装名 TO-247-4 HC 8.8mm
封装尺寸 240
封装类型 TUBE
湿度 NA
防潮封装 NON DRY
无铅
无卤素
符合 RoHS 标准
封装产地
CN
晶圆产地
AT,MY
CoolSiC™ JFET 1200 V 5.0 mΩ in the widely used TO-247 package is optimized for solid-state power distribution and protection applications. Its low on-state resistance minimizes conduction losses in continuously conducting systems, while robust trench SiC JFET technology provides thermally stable linear-mode operation, high inductive clamping capability, and strong overload and overcurrent performance.

特性

  • 1200 V drain-source blocking voltage
  • Low RDS in a through-hole package
  • Normally-on SiC JFET technology
  • Thermally stable linear-mode operation
  • High-current avalanche ruggedness
  • Surge-current ruggedness
  • Overload operation up to Tj = 200°C
  • Established TO-247 package concept

产品优势

  • Minimized conduction losses
  • Reduced thermal-management effort
  • Rugged inductive fault-energy handling
  • Handling of inrush and overload events
  • Easy integration with popular package
  • Robust overload/ surge-current handling

应用

文档

设计资源

合作伙伴解决方案

开发者社区