新品
现货,推荐
符合RoHS标准
无铅

IMCQ120R004M2H

新品
CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
多个 OPN 可用
每件.

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商品详情

  • Ciss
    13 nF
  • Coss
    574 pF
  • ID (@25°C) max
    403 A
  • ID (@ TA=25°C) max
    403 A
  • Ptot (@ TA=25°C) max
    1500 W
  • Qgd
    86 nC
  • QG
    348 nC
  • RDS (on) (@ Tj = 25°C)
    3.7 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.07 K/W
  • Tj max
    175 °C
  • VDS max
    1200 V
  • 安装
    SMD
  • 封装
    PG-HDSOP-22-U03
  • 工作温度
    -55 °C to 175 °C
  • 引脚数量
    4 Pins
  • 技术
    CoolSiC™ G2
  • 极性
    N
  • 认证标准
    Industrial
OPN
IMCQ120R004M2HXUMA1 IMCQ120R004M2HXTMA1
产品状态 active and preferred coming soon
英飞凌封装名称
封装名 Q-DPAK Q-DPAK
包装尺寸 750 750
包装类型 TAPE & REEL TAPE & REEL
湿度 2 1
防潮包装 DRY NON DRY
无铅 Yes Yes
无卤素 Yes Yes
符合RoHS标准 Yes Yes
Infineon stock last updated:
每件. 有存货

产品状态
Active
英飞凌封装名称
封装名 Q-DPAK
包装尺寸 750
包装类型 TAPE & REEL
湿度 2
防潮包装 DRY
无铅
无卤素
符合 RoHS 标准
每件.
有存货

产品状态 coming soon
英飞凌封装名称
封装名 Q-DPAK
包装尺寸 750
包装类型 TAPE & REEL
湿度 1
防潮包装 NON DRY
无铅
无卤素
符合 RoHS 标准
CoolSiC™ MOSFET discrete 1200 V, 4 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.

特性

  • VDSS = 1200 V @Tvj = 25°C
  • IDDC = 287 A at TC = 100°C
  • RDS(on) = 3.7 mΩ @VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage
  • Robust against parasitic turn on
  • Robust body diode for hard commutation
  • .XT interconnection technology

产品优势

  • Outstanding thermal performance
  • Increases energy efficiency
  • Higher power density
  • More compact and easier designs
  • Lower TCO cost or BOM cost

文档

设计资源

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